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| AP4409GEM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic RoHS Compliant SO-8 S S D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G S -35V 7.5m -14.5A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3a 3a Rating -35 20 -14.5 -12 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3a Value Max 50 Unit /W Data and specifications subject to change without notice 200327063-1/4 AP4409GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -0.8 - Typ. -0.02 13 55 10 30 18 10 160 110 860 770 Max. Units 7.5 15 -2 -10 -25 30 90 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7A VGS=-4V, ID=-7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-14A VDS=-30V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 4100 6600 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-14A, VGS=0V IS=-14A, VGS=0V, dI/dt=100A/s Min. - Typ. 43 37 Max. Units -1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board a, t <10sec (a) 1 in 2 pad of 2 oz copper (b) 125/W when mounted on a 0.003 in2 pad of 2 oz copper 2/4 AP4409GEM 50 50 T A = 25 o C 40 -ID , Drain Current (A) -ID , Drain Current (A) - 10V -5.0 V -4.5 V -3.0 V T A = 150 o C 40 -10V - 5.0 V - 4.5 V - 3.0 V 30 30 20 V G = - 2.5 V 20 V G = - 2.5 V 10 10 0 0 0 1 2 3 4 0 1 2 3 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.8 21 ID=-7A T A =25 Normalized RDS(ON) 1.4 I D =-7A V G =-10V RDS(ON\) (m ) 16 1.0 11 6 0.6 2 4 6 8 10 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 14 12 1.4 T j =150 C 8 o T j =25 C o Normalized -VGS(th) (V) 10 -IS(A) 1.0 6 4 0.6 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP4409GEM 16 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 12 ID= -14A V DS = - 30 V C iss C (pF) 8 1000 C oss C rss 4 0 0 30 60 90 120 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 1ms 10 Normalized Thermal Response (Rthja) 0.2 0.1 0.1 10ms 1 0.05 -ID (A) 100ms 1s 0.1 0.02 PDM 0.01 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + T a T A =25 o C Single Pulse 0.01 0.1 1 10 DC Single Pulse Rthja=125oC/W 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 V DS =-5V VG T j =25 o C T j =150 o C -ID , Drain Current (A) QG -4.5V QGS QGD 40 20 Charge 0 Q 0 1 2 3 4 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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